Raman spectra of CaCuO2/SrTiO3 superlattices show clear spectroscopic marker of two structures formed in CaCuO2 at the interface with SrTiO3. For non-superconducting superlattices, grown in low oxidizing atmosphere, the 425 cm-1 frequency of oxygen vibration in CuO2 planes is the same as for CCO films with infinite layer structure (planar Cu-O coordination). For superconducting superlattices grown in highly oxidizing atmosphere, a 60 cm-1 frequency shift to lower energy occurs. This is ascribed to a change from planar to pyramidal Cu-O coordination because of oxygen incorporation at the interface. Raman spectroscopy proves to be a powerful tool for interface structure investigation. © 2013 AIP Publishing LLC.

Raman spectroscopy study of the interface structure in (CaCuO 2)n/(SrTiO3)m superlattices / D., Di Castro; Caramazza, Simone; D., Innocenti; G., Balestrino; C., Marini; Dore, Paolo; Postorino, Paolo. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - ELETTRONICO. - 103:19(2013), p. 191903. [10.1063/1.4828358]

Raman spectroscopy study of the interface structure in (CaCuO 2)n/(SrTiO3)m superlattices

CARAMAZZA, SIMONE;DORE, Paolo;POSTORINO, Paolo
2013

Abstract

Raman spectra of CaCuO2/SrTiO3 superlattices show clear spectroscopic marker of two structures formed in CaCuO2 at the interface with SrTiO3. For non-superconducting superlattices, grown in low oxidizing atmosphere, the 425 cm-1 frequency of oxygen vibration in CuO2 planes is the same as for CCO films with infinite layer structure (planar Cu-O coordination). For superconducting superlattices grown in highly oxidizing atmosphere, a 60 cm-1 frequency shift to lower energy occurs. This is ascribed to a change from planar to pyramidal Cu-O coordination because of oxygen incorporation at the interface. Raman spectroscopy proves to be a powerful tool for interface structure investigation. © 2013 AIP Publishing LLC.
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Raman spectroscopy study of the interface structure in (CaCuO 2)n/(SrTiO3)m superlattices / D., Di Castro; Caramazza, Simone; D., Innocenti; G., Balestrino; C., Marini; Dore, Paolo; Postorino, Paolo. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - ELETTRONICO. - 103:19(2013), p. 191903. [10.1063/1.4828358]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/543693
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