We fabricated in-house Field Effect Transistors detectors on GaN-heterostructures where we integrated on-chip broadband antennas for rectification of THz current oscillations in the high mobility two-dimensional electron gas. © 2012 IEEE.
A terahertz oscillator based on GaN-HFET with integrated antenna for frequency mixing and rectification / A., Di Gaspare; ORTOLANI, MICHELE; R., Casini; V., Foglietti; GILIBERTI, VALERIA; E., Giovine; F., Evangelisti; S., Sadofev; R., Calarco. - STAMPA. - (2012). (Intervento presentato al convegno 37th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2012 tenutosi a Wollongong; Australia nel 23 September 2012 through 28 September 2012) [10.1109/irmmw-thz.2012.6379487].
A terahertz oscillator based on GaN-HFET with integrated antenna for frequency mixing and rectification
ORTOLANI, MICHELE;GILIBERTI, VALERIA;
2012
Abstract
We fabricated in-house Field Effect Transistors detectors on GaN-heterostructures where we integrated on-chip broadband antennas for rectification of THz current oscillations in the high mobility two-dimensional electron gas. © 2012 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
