We fabricated a two-dimensional-electron-gas field effect transistor with an asymmetric terahertz antenna connected to the channel terminals and a gate length of 1 μm. We investigated frequency mixing in the transistor's channel by measuring, with a quasi-optical setup, the heterodyne, second- and third-order subharmonic mixing signal at 0.592 THz. The dependence on the gate voltage and on the radiation power of both the local-oscillator and the radio-frequency signals was studied for all mixing orders. The conditions for full-plasmonic-mixing are fulfilled in our transistor at room temperature. © 2013 AIP Publishing LLC.
We fabricated a two-dimensional-electron-gas field effect transistor with an asymmetric terahertz antenna connected to the channel terminals and a gate length of 1 μm. We investigated frequency mixing in the transistor's channel by measuring, with a quasi-optical setup, the heterodyne, second- and third-order subharmonic mixing signal at 0.592 THz. The dependence on the gate voltage and on the radiation power of both the local-oscillator and the radio-frequency signals was studied for all mixing orders. The conditions for full-plasmonic-mixing are fulfilled in our transistor at room temperature. © 2013 AIP Publishing LLC.
Heterodyne and subharmonic mixing at 0.6 THz in an AlGaAs/InGaAs/AlGaAs heterostructure field effect transistor / Giliberti, Valeria; Alessandra Di, Gaspare; Giovine, Ennio; A., Lisauskas; Sebastian, Boppel; Hartmut G., Roskos; Ortolani, Michele. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 103:9(2013), pp. 093505-093508. [10.1063/1.4819734]
Heterodyne and subharmonic mixing at 0.6 THz in an AlGaAs/InGaAs/AlGaAs heterostructure field effect transistor
GILIBERTI, VALERIA;GIOVINE, ennio;ORTOLANI, MICHELE
2013
Abstract
We fabricated a two-dimensional-electron-gas field effect transistor with an asymmetric terahertz antenna connected to the channel terminals and a gate length of 1 μm. We investigated frequency mixing in the transistor's channel by measuring, with a quasi-optical setup, the heterodyne, second- and third-order subharmonic mixing signal at 0.592 THz. The dependence on the gate voltage and on the radiation power of both the local-oscillator and the radio-frequency signals was studied for all mixing orders. The conditions for full-plasmonic-mixing are fulfilled in our transistor at room temperature. © 2013 AIP Publishing LLC.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
