A physically based circuit model of on-chip spiral inductor made of a single-wall carbon nanotube (SWCNT) bundle is investigated. The equivalent single conductor (ESC) approach is used to model the CNT bundle. The internal frequency-dependent resistance and inductance are computed by a finite element method (FEM). The eddy-current effect in the silicon substrate is taken into account by the complex image theory. The analytical expressions of the substrate capacitances and conductance are validated by FEM. Performance of different integrated inductors in the gigahertz range are investigated.
High Frequency Performance of Carbon Nanotube-Based Spiral Inductors / D'Amore, Marcello; Maradei, Francescaromana; Cruciani, S.; Feliziani, M.. - STAMPA. - (2013), pp. 765-760. (Intervento presentato al convegno EMC EUROPE 2013 tenutosi a Brugge nel 2-6/09/2013).
High Frequency Performance of Carbon Nanotube-Based Spiral Inductors
D'AMORE, Marcello;MARADEI, Francescaromana;S. Cruciani;
2013
Abstract
A physically based circuit model of on-chip spiral inductor made of a single-wall carbon nanotube (SWCNT) bundle is investigated. The equivalent single conductor (ESC) approach is used to model the CNT bundle. The internal frequency-dependent resistance and inductance are computed by a finite element method (FEM). The eddy-current effect in the silicon substrate is taken into account by the complex image theory. The analytical expressions of the substrate capacitances and conductance are validated by FEM. Performance of different integrated inductors in the gigahertz range are investigated.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
