A new cold cathode klystron oscillator in the THz range is presented. Modeling and design of the THz klystron cavity, bunching grid, repeller and output structure based on silicon technology are presented. Technology and measured characteristics of the ultrahigh current density field emission array cathode are presented. © 2013 IEEE.

Nano-klystron: New design and technology for THz source / Balucani, Marco; S., Scafe; D'Inzeo, Guglielmo; Paffi, Alessandra; Ferrara, Vincenzo; Nenzi, Paolo. - STAMPA. - (2013), pp. 1-2. ((Intervento presentato al convegno 2013 6th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2013 tenutosi a Rome [10.1109/ucmmt.2013.6641519].

Nano-klystron: New design and technology for THz source

BALUCANI, Marco;D'INZEO, Guglielmo;PAFFI, ALESSANDRA;FERRARA, Vincenzo;NENZI, Paolo
2013

Abstract

A new cold cathode klystron oscillator in the THz range is presented. Modeling and design of the THz klystron cavity, bunching grid, repeller and output structure based on silicon technology are presented. Technology and measured characteristics of the ultrahigh current density field emission array cathode are presented. © 2013 IEEE.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11573/530766
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