Accurate models for the current-voltage characteristics of vertically compressed piezo-semiconductive quasi-1D NWs

We investigate the electrical transport in quasi-1D piezo-semiconductive NWs under purely vertical compressive or tensile strains. For simplicity, we exclusively consider the additional band bending originated by the piezoelectric charges assumed to be distributed, with a constant volumic density, within a maximum distance piezo  from the metal-to-NW junction. Our calculations demonstrate that the carrier concentration, the energy conduction band profile and the I-V characteristics significantly depend on piezo  . We therefore propose that I-V measurements can allow to obtain information on piezo  in strained piezo-semiconductors.