We report on resonant Raman experiments carried out on wurtzite InAs nanowires. Resonant conditions have been obtained by tuning either the excitation energy or the band gap through external high pressure at fixed excitation energy. A complete azimuthal study of the Raman spectra with two laser excitation lines (2.41 and 1.92 eV) has also been performed on a single wire. The measured E2 H mode resonance indicates that the E1(A) gap is about 2.4 eV, which is considerably reduced with respect to the zinc-blende InAs E1 gap. These findings confirm recent theoretical calculations of crystal phase induced bandstructure modifications. © 2013 American Chemical Society.
E1(A) electronic band gap in wurtzite InAs nanowires studied by resonant Raman scattering / Ilaria, Zardo; Sara, Yazji; Hörmann, Nicolas; Hertenberger, Simon; Stefan, Funk; Mangialardo, Sara; Stefanie, Morkotter; Koblmüller, Gregor; Postorino, Paolo; Abstreiter, Gerhard. - In: NANO LETTERS. - ISSN 1530-6984. - STAMPA. - 13:7(2013), pp. 3011-3016. [10.1021/nl304528j]
E1(A) electronic band gap in wurtzite InAs nanowires studied by resonant Raman scattering
MANGIALARDO, SARA;POSTORINO, Paolo;
2013
Abstract
We report on resonant Raman experiments carried out on wurtzite InAs nanowires. Resonant conditions have been obtained by tuning either the excitation energy or the band gap through external high pressure at fixed excitation energy. A complete azimuthal study of the Raman spectra with two laser excitation lines (2.41 and 1.92 eV) has also been performed on a single wire. The measured E2 H mode resonance indicates that the E1(A) gap is about 2.4 eV, which is considerably reduced with respect to the zinc-blende InAs E1 gap. These findings confirm recent theoretical calculations of crystal phase induced bandstructure modifications. © 2013 American Chemical Society.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
