This study analyzes in detail the defects in bakelite observed in Resistive Plate Counters (RPC) after exposure to high-radiation environment and fluxed with humidified gas mixture at 9 kV voltage. Objective of this study was to identify the nature of defects and their formation mechanism. The defects were observed firstly on the whole RPC inner surface, and their localization mapped. The defected areas have been analyzed with optical and electron microscopy (SEM), and chemically by EDS (Energy Dispersion Spectroscopy) techniques. An area particularly defect-rich also analysed by x-ray diffraction (XRD). Samples of new and fluxed bakelite have been chemically analyzed by ICP-Plasma (via sample total digestion) in order to determine trace elements variations in composition. model is proposed to explain the chemistry of the formation process.

A model for the formation of defects in RPC bakelite plates at high radiation levels / T., Greci; Felli, Ferdinando; Saviano, Giovanna; L., Benussi; S., Bianco; L., Passamonti; D., Piccolo; A., Russo; D., Pierluigi. - In: JOURNAL OF INSTRUMENTATION. - ISSN 1748-0221. - ELETTRONICO. - 8:4(2013), pp. T04003-T04003. [10.1088/1748-0221/8/04/t04003]

A model for the formation of defects in RPC bakelite plates at high radiation levels

FELLI, Ferdinando;SAVIANO, Giovanna;
2013

Abstract

This study analyzes in detail the defects in bakelite observed in Resistive Plate Counters (RPC) after exposure to high-radiation environment and fluxed with humidified gas mixture at 9 kV voltage. Objective of this study was to identify the nature of defects and their formation mechanism. The defects were observed firstly on the whole RPC inner surface, and their localization mapped. The defected areas have been analyzed with optical and electron microscopy (SEM), and chemically by EDS (Energy Dispersion Spectroscopy) techniques. An area particularly defect-rich also analysed by x-ray diffraction (XRD). Samples of new and fluxed bakelite have been chemically analyzed by ICP-Plasma (via sample total digestion) in order to determine trace elements variations in composition. model is proposed to explain the chemistry of the formation process.
2013
radiation damage to detector materials (gas detectors); radiation damage evaluation methods; resistive-plate chambers
01 Pubblicazione su rivista::01a Articolo in rivista
A model for the formation of defects in RPC bakelite plates at high radiation levels / T., Greci; Felli, Ferdinando; Saviano, Giovanna; L., Benussi; S., Bianco; L., Passamonti; D., Piccolo; A., Russo; D., Pierluigi. - In: JOURNAL OF INSTRUMENTATION. - ISSN 1748-0221. - ELETTRONICO. - 8:4(2013), pp. T04003-T04003. [10.1088/1748-0221/8/04/t04003]
File allegati a questo prodotto
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/514778
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 1
  • ???jsp.display-item.citation.isi??? 1
social impact