The introduction of vibration-based Nano Electro-Mechanical Transistors (NEMT) opens a new horizon for mechanics in computer science. NEMT working principle is based on an electrical charge shuttle between two electrodes operated by a vibrating conductor body. Advantages of these novel devices would be very low power dissipation, limited influence of external electromagnetic disturbances, and improved thermal resistance. The paper introduces an analytical model for such a device, in which the matching of a mechanical resonator and an electric circuit is studied: the coupling is provided by capacitance effects, electrostatic force and the quantum tunneling. The approach is quasi-classical, describing the quantum phenomena through a non-linear conductance and using a continuous variable for the charges. Through suitably introduced simplifications, the model is reduced to a set of two differential equations in terms of pillar position and charge. These equations represent the simplest model still preserving the basic phenomenology of the investigated system. Numerical simulations show different possible motion regimes, both in the single- and multiple-module configurations, the latter able to reproduce the conventional transistor functionality. This opens the way to mechanical voltage-driven switches or amplifiers.
Semi-classical modeling of nano-mechanical transistors / Scorrano, Alessandro; Carcaterra, Antonio. - In: MECHANICAL SYSTEMS AND SIGNAL PROCESSING. - ISSN 0888-3270. - STAMPA. - 39:(2013), pp. 489-514.
Semi-classical modeling of nano-mechanical transistors
SCORRANO, ALESSANDRO;CARCATERRA, Antonio
2013
Abstract
The introduction of vibration-based Nano Electro-Mechanical Transistors (NEMT) opens a new horizon for mechanics in computer science. NEMT working principle is based on an electrical charge shuttle between two electrodes operated by a vibrating conductor body. Advantages of these novel devices would be very low power dissipation, limited influence of external electromagnetic disturbances, and improved thermal resistance. The paper introduces an analytical model for such a device, in which the matching of a mechanical resonator and an electric circuit is studied: the coupling is provided by capacitance effects, electrostatic force and the quantum tunneling. The approach is quasi-classical, describing the quantum phenomena through a non-linear conductance and using a continuous variable for the charges. Through suitably introduced simplifications, the model is reduced to a set of two differential equations in terms of pillar position and charge. These equations represent the simplest model still preserving the basic phenomenology of the investigated system. Numerical simulations show different possible motion regimes, both in the single- and multiple-module configurations, the latter able to reproduce the conventional transistor functionality. This opens the way to mechanical voltage-driven switches or amplifiers.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.