In this paper we present a detailed study of the intersubband absorption occurring between electron states confined in strained Ge multi-quantum wells as a function of the temperature. The high structural quality of the samples is reflected by the very narrow absorption line-shape constant with temperature. We observe a temperature driven charge transfer occurring between the ground and the first excited subband which, in turn, induces a change in the depolarization shift and consequently in the energy of the absorbance peak. The experimental observations are well accounted for by a multi-valley k center dot p model.
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift / M., De Seta; G., Capellini; Ortolani, Michele; M., Virgilio; G., Grosso; G., Nicotra; P., Zaumseil. - In: NANOTECHNOLOGY. - ISSN 0957-4484. - STAMPA. - 23:46(2012), pp. 465708-465715. [10.1088/0957-4484/23/46/465708]
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift
ORTOLANI, MICHELE;
2012
Abstract
In this paper we present a detailed study of the intersubband absorption occurring between electron states confined in strained Ge multi-quantum wells as a function of the temperature. The high structural quality of the samples is reflected by the very narrow absorption line-shape constant with temperature. We observe a temperature driven charge transfer occurring between the ground and the first excited subband which, in turn, induces a change in the depolarization shift and consequently in the energy of the absorbance peak. The experimental observations are well accounted for by a multi-valley k center dot p model.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
