A complete spatial characterization of the emission of a bright and stable electroluminescent Schottky diode based on aluminium-porous silicon junction is reported. The device emits white light observable by naked eye when a reverse bias is applied, when the junction is in breakdown conditions. This device has a very fast time response of the light emission (200 MHz) and excellent stability (over 1000 hours of continuous operation at high current density levels). Spatial map of light emission and bias conditions dependence of the emission intensity are presented. Spatial width of the emission at the edge of top contact has been measured, and device optical power emission density was found to be higher than 3 W/cm(2). Light emission dependence on the current supplied to the device, and on the distance from the supplying wire along the edge of top electrode of the device has been characterised, resulting in linear dependencies in both cases. On the base of these results the potential distribution along the Al electrode during operation has been calculated. This work opens the way for a systematic design of device efficiency optimization.
Light Emission Characterization of Al-Porous Silicon Schottky Junction / S., La Monica; Balucani, Marco; G., Castaldo; S., Lazarouk; G., Maiello; G., Masini; Ferrari, Aldo. - In: DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA. - ISSN 1012-0394. - STAMPA. - 54:(1997), pp. 37-44. [10.4028/www.scientific.net/SSP.54.37]
Light Emission Characterization of Al-Porous Silicon Schottky Junction
BALUCANI, Marco;FERRARI, Aldo
1997
Abstract
A complete spatial characterization of the emission of a bright and stable electroluminescent Schottky diode based on aluminium-porous silicon junction is reported. The device emits white light observable by naked eye when a reverse bias is applied, when the junction is in breakdown conditions. This device has a very fast time response of the light emission (200 MHz) and excellent stability (over 1000 hours of continuous operation at high current density levels). Spatial map of light emission and bias conditions dependence of the emission intensity are presented. Spatial width of the emission at the edge of top contact has been measured, and device optical power emission density was found to be higher than 3 W/cm(2). Light emission dependence on the current supplied to the device, and on the distance from the supplying wire along the edge of top electrode of the device has been characterised, resulting in linear dependencies in both cases. On the base of these results the potential distribution along the Al electrode during operation has been calculated. This work opens the way for a systematic design of device efficiency optimization.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
