Two different oxidized porous silicon samples were saturated with lantanum oxysulfide luminophors doped with Er and Yb from their colloidal alcoholic solutions. One of the samples was annealed at 700 degrees C for 10 min, another was heat treated at 100 degrees C for 6h, After annealing, both exhibited room-temperature Er3+ photoluminescence which increased significantly under excitation at wavelengths corresponding to the absorption band of porous silicon. In addition, the sample containing the largest amount of Yb3+ revealed a strong Yb3+ photoluminescence at 985 nm.
Visible and IR Photoluminescence of Erbium Doped Porous Silicon Films / V. V., Filippov; P. P., Pershukevich; V. S., Homenko; Balucani, Marco; V., Bondarenko; S., La Monica; G., Maiello; G., Masini; Ferrari, Aldo. - In: DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA. - ISSN 1012-0394. - STAMPA. - 54:(1997), pp. 94-100. [10.4028/www.scientific.net/SSP.54.94]
Visible and IR Photoluminescence of Erbium Doped Porous Silicon Films
BALUCANI, Marco;FERRARI, Aldo
1997
Abstract
Two different oxidized porous silicon samples were saturated with lantanum oxysulfide luminophors doped with Er and Yb from their colloidal alcoholic solutions. One of the samples was annealed at 700 degrees C for 10 min, another was heat treated at 100 degrees C for 6h, After annealing, both exhibited room-temperature Er3+ photoluminescence which increased significantly under excitation at wavelengths corresponding to the absorption band of porous silicon. In addition, the sample containing the largest amount of Yb3+ revealed a strong Yb3+ photoluminescence at 985 nm.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
