Slightly modified CMOS process has been used for the formation of lateral pn junctions in SOI structures based on oxidized porous silicon. Under forward bias these junctions emit infrared light at 1120 nm. Under reverse bias in the breakdown regime the pn junctions demonstrate both infrared and visible light emissions with efficiencies of 10(-4) and 10(-7), respectively. The beneficial influence of SOI structures on electroluminescence characterictics of light-emitting pn junctions has been established.
Characterization of silicon LEDs integrated with oxidized porous silicon SOI / Balucani, Marco; V., Bondarenko; A., Dorofeev; F., Ermalitski; N., Kazuchits; G., Maiello; L., Masini; S., Melnikov; S., La Monica; S., Volchek; Ferrari, Aldo. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - STAMPA. - 36:1-4(1997), pp. 115-118. (Intervento presentato al convegno 10th Biennial Conference on Insulating Films on Semiconductors (INFOS 97) tenutosi a STENUNGSUND, SWEDEN nel JUN 10-14, 1997) [10.1016/s0167-9317(97)00028-2].
Characterization of silicon LEDs integrated with oxidized porous silicon SOI
BALUCANI, Marco;FERRARI, Aldo
1997
Abstract
Slightly modified CMOS process has been used for the formation of lateral pn junctions in SOI structures based on oxidized porous silicon. Under forward bias these junctions emit infrared light at 1120 nm. Under reverse bias in the breakdown regime the pn junctions demonstrate both infrared and visible light emissions with efficiencies of 10(-4) and 10(-7), respectively. The beneficial influence of SOI structures on electroluminescence characterictics of light-emitting pn junctions has been established.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
