Different copper nanostructures have been deposited onto porous silicon (PS) by using HF-based solutions of CuSO4 and immersion technique. The variation of the porous template parameters and deposition regimes has been found to allow obtaining of copper nanoparticles, copper rough films and porous copper layers. The dimensions, roughness, structural parameters and phase composition of the obtained copper nanostructures have been established. ©The Electrochemical Society.
Characterization of Copper Nanostructures Grown on Porous Silicon by Displacement Deposition / Hanna, Bandarenka; Vladimir, Petrovich; Olga, Komar; Nenzi, Paolo; Balucani, Marco; Vitaly, Bondarenko. - In: ECS TRANSACTIONS. - ISSN 1938-5862. - ELETTRONICO. - 41:45(2012), pp. 13-22. (Intervento presentato al convegno Nanostructured Materials: Chemistry and High-Temperature Applications - 220th ECS Meeting tenutosi a Boston, MA nel 9 October 2011 through 14 October 2011) [10.1149/1.4711400].
Characterization of Copper Nanostructures Grown on Porous Silicon by Displacement Deposition
NENZI, Paolo;BALUCANI, Marco;
2012
Abstract
Different copper nanostructures have been deposited onto porous silicon (PS) by using HF-based solutions of CuSO4 and immersion technique. The variation of the porous template parameters and deposition regimes has been found to allow obtaining of copper nanoparticles, copper rough films and porous copper layers. The dimensions, roughness, structural parameters and phase composition of the obtained copper nanostructures have been established. ©The Electrochemical Society.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
