Amorphous hydrogenated silicon a-Si:H. thin films deposited on a 100 Si wafer by plasma enhanced chemical vapor deposition PECVD. were irradiated by KrF ls248 nm. excimer laser or treated in a plasma jet generated by a capacity coupled RF discharge in N2, respectively. Various techniques such as X-ray photoelectron spectroscopy XPS., ellipsometry, optical microscopy and microhardness measurements were used to characterize the laser and nitrogen plasma jet induced composition and crystallinity modifications. Oxidationrreduction effects together with crystallization were evidenced in the case of the laser treatment. The formation of different compounds containing Si, C, N and O was observed as an effect of nitrogen plasma treatment
Laser and Nitrogen Plasma Beam Induced Modifications in Amorphous Silicon Thin Films / Ferrari, Aldo; G., Maiello; S., La Monica; DE CESARE, Giampiero; G., Dinescu; M., Dinescu; E., Aldea; N., Chitica; I., Morjan; M., Gartner; G., Masini. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - STAMPA. - 109:(1997), pp. 87-92. [10.1016/S0169-4332(96)00645-9]
Laser and Nitrogen Plasma Beam Induced Modifications in Amorphous Silicon Thin Films
FERRARI, Aldo;DE CESARE, Giampiero;
1997
Abstract
Amorphous hydrogenated silicon a-Si:H. thin films deposited on a 100 Si wafer by plasma enhanced chemical vapor deposition PECVD. were irradiated by KrF ls248 nm. excimer laser or treated in a plasma jet generated by a capacity coupled RF discharge in N2, respectively. Various techniques such as X-ray photoelectron spectroscopy XPS., ellipsometry, optical microscopy and microhardness measurements were used to characterize the laser and nitrogen plasma jet induced composition and crystallinity modifications. Oxidationrreduction effects together with crystallization were evidenced in the case of the laser treatment. The formation of different compounds containing Si, C, N and O was observed as an effect of nitrogen plasma treatmentI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
