Thin Al intralayers induce changes in the valence-band discontinuities for the Ge/ZnSe(110) and the Ge/CdS(1010) heterojunctions, but not for the Si/GaP(110) heterojunction. We studied the dependence of the changes on the intralayer thickness, and their correlation to the local chemical reactions. The changes saturate for intralayers thicknesses (1/2 monolayer. For these thin intralayers, the Al is highly reacted with the anion of the compound semiconductor. The results indicate that the band lineup at heterojunction interfaces is affected by a Schottky-like term, as recently suggested by several theories. However, they also show that such a term does not imply the formation of a metallic Al phase. © 1988 The American Physical Society.
SCHOTTKY-LIKE CORRECTION TERMS IN HETEROJUNCTION BAND LINEUPS / D. W., Niles; M., Tang; J., Mckinley; Zanoni, Robertino; G., Margaritondo. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 38:15(1988), pp. 10949-10952. [10.1103/physrevb.38.10949]
SCHOTTKY-LIKE CORRECTION TERMS IN HETEROJUNCTION BAND LINEUPS
ZANONI, Robertino;
1988
Abstract
Thin Al intralayers induce changes in the valence-band discontinuities for the Ge/ZnSe(110) and the Ge/CdS(1010) heterojunctions, but not for the Si/GaP(110) heterojunction. We studied the dependence of the changes on the intralayer thickness, and their correlation to the local chemical reactions. The changes saturate for intralayers thicknesses (1/2 monolayer. For these thin intralayers, the Al is highly reacted with the anion of the compound semiconductor. The results indicate that the band lineup at heterojunction interfaces is affected by a Schottky-like term, as recently suggested by several theories. However, they also show that such a term does not imply the formation of a metallic Al phase. © 1988 The American Physical Society.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
