The decomposition of SiH4, both pure and in mixtures with NO and C2H2, induced by continuous and pulsed IR laser radiation has been investigated over a wide pressure range up to high conversion. The results are discussed on the basis of the formation of ground or electronically excited SiH2 and its subsequent reactions. Comparison with calculations of unimolecular decomposition rates based on RRKM theory provides evidence that nonequilibrium distributions of electronically excited species are responsible for observed alternative reaction paths.
IR laser photolysis of mixtures of silane with nitric oxides and acetylene / V., Di Napoli; A., Mele; Stranges, Domenico; A., Giardini Guidoni; R., Teghil. - In: CHEMICAL PHYSICS LETTERS. - ISSN 0009-2614. - STAMPA. - 154:(1989), pp. 217-222. [10.1016/0009-2614(89)87451-2]
IR laser photolysis of mixtures of silane with nitric oxides and acetylene
STRANGES, Domenico;
1989
Abstract
The decomposition of SiH4, both pure and in mixtures with NO and C2H2, induced by continuous and pulsed IR laser radiation has been investigated over a wide pressure range up to high conversion. The results are discussed on the basis of the formation of ground or electronically excited SiH2 and its subsequent reactions. Comparison with calculations of unimolecular decomposition rates based on RRKM theory provides evidence that nonequilibrium distributions of electronically excited species are responsible for observed alternative reaction paths.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
