Homonuclear cluster ions formed from C, Si, Ge and Sn powders as well as mixtures of these elements have been investigated by laser mass spectrometry. The mechanism of formation of silicon and germanium carbide cluster ions is discussed in relation to the cluster ions produced from the pure elements. © 1989.

Abundance distribution of cluster ions in the laser mass spectra of the pure elements C, Si, Ge, Sn and of binary cluster ions from their mixtures / D., Consalvo; A., Mele; Stranges, Domenico; A., Giardini Guidoni; R., Teghil. - In: INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES. - ISSN 0168-1176. - STAMPA. - 91:3(1989), pp. 319-325. [10.1016/0168-1176(89)80086-2]

Abundance distribution of cluster ions in the laser mass spectra of the pure elements C, Si, Ge, Sn and of binary cluster ions from their mixtures

STRANGES, Domenico;
1989

Abstract

Homonuclear cluster ions formed from C, Si, Ge and Sn powders as well as mixtures of these elements have been investigated by laser mass spectrometry. The mechanism of formation of silicon and germanium carbide cluster ions is discussed in relation to the cluster ions produced from the pure elements. © 1989.
1989
01 Pubblicazione su rivista::01a Articolo in rivista
Abundance distribution of cluster ions in the laser mass spectra of the pure elements C, Si, Ge, Sn and of binary cluster ions from their mixtures / D., Consalvo; A., Mele; Stranges, Domenico; A., Giardini Guidoni; R., Teghil. - In: INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES. - ISSN 0168-1176. - STAMPA. - 91:3(1989), pp. 319-325. [10.1016/0168-1176(89)80086-2]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/469462
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