Transverse acoustoelectric voltage (TAV) measurements have been extensively used for the characterization of semiconductor properties. These measurements are rapidly becoming a powerful tool to study semiconductor processes and structures. The effect of trapped charges on the TAV is investigated in the present paper, with the aim of extending the use of TAV measurements to the study of semiconductors with high defect density. Even if SAW frequencies are as high as 100 MHz, charge trapping can influence the TAV. This has been verified by two particular experiments performed on Si/SiO2 structures with high density of interface states. A theoretical model is proposed to explain the effects of the presence of deep-trap levels on the TAV. New boundary conditions for the acoustoelectric equations are introduced and an approximate solution for the TAV amplitude is presented. The model is used to define a new procedure for the determination of interface states' density using TAV versus bias voltage (TAV - V(B)) measurements.
EFFECT OF DEEP-TRAP LEVEL ON TRANSVERSE ACOUSTOELECTRIC VOLTAGE MEASUREMENTS / Palma, Fabrizio; DE CESARE, Giampiero; A., Abbate; P., Das. - In: IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL. - ISSN 0885-3010. - 38:5(1991), pp. 503-509. [10.1109/58.84297]
EFFECT OF DEEP-TRAP LEVEL ON TRANSVERSE ACOUSTOELECTRIC VOLTAGE MEASUREMENTS
PALMA, Fabrizio;DE CESARE, Giampiero;
1991
Abstract
Transverse acoustoelectric voltage (TAV) measurements have been extensively used for the characterization of semiconductor properties. These measurements are rapidly becoming a powerful tool to study semiconductor processes and structures. The effect of trapped charges on the TAV is investigated in the present paper, with the aim of extending the use of TAV measurements to the study of semiconductors with high defect density. Even if SAW frequencies are as high as 100 MHz, charge trapping can influence the TAV. This has been verified by two particular experiments performed on Si/SiO2 structures with high density of interface states. A theoretical model is proposed to explain the effects of the presence of deep-trap levels on the TAV. New boundary conditions for the acoustoelectric equations are introduced and an approximate solution for the TAV amplitude is presented. The model is used to define a new procedure for the determination of interface states' density using TAV versus bias voltage (TAV - V(B)) measurements.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
