The electronic structure of metallic Sn, polycrystalline Sn oxides, and (110) natural single crystal SnO2 (cassiterite) was studied by high resolution measurements of core and valence photoemission, photoinduced Auger spectra, and energy loss spectra. The advantage of in vacuo scraping in obtaining SnO surfaces is shown in comparison with surface cleaning by ion sputtering. Valence band x-ray photoemission spectroscopy spectra are interpreted by a cluster-type discrete variational Xα molecular orbital model, revealing the change in the electronic structure which leads to an increased conductivity. The use of the Auger parameter approach in gaining information on the initial and final state effects, ligand polarizability, and final state hole-hole repulsion energies are demonstrated for the case of tin oxides.
High resolution photoemission and Auger parameter studies of electronic structure of tin oxides / L., Kover; Moretti, Giuliano; Kovacs, Z. s.; R., Sanjines; I., Cserny; G., Margaritondo; J., Palinkas; H., Adachi. - In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A. VACUUM, SURFACES, AND FILMS. - ISSN 0734-2101. - STAMPA. - (1995), pp. 1382-1388. [10.1116/1.579568]
High resolution photoemission and Auger parameter studies of electronic structure of tin oxides
MORETTI, GIULIANO;
1995
Abstract
The electronic structure of metallic Sn, polycrystalline Sn oxides, and (110) natural single crystal SnO2 (cassiterite) was studied by high resolution measurements of core and valence photoemission, photoinduced Auger spectra, and energy loss spectra. The advantage of in vacuo scraping in obtaining SnO surfaces is shown in comparison with surface cleaning by ion sputtering. Valence band x-ray photoemission spectroscopy spectra are interpreted by a cluster-type discrete variational Xα molecular orbital model, revealing the change in the electronic structure which leads to an increased conductivity. The use of the Auger parameter approach in gaining information on the initial and final state effects, ligand polarizability, and final state hole-hole repulsion energies are demonstrated for the case of tin oxides.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.