Static leakage currents represent a major issue in nano-scale CMOS. In digital VLSI circuits, the most relevant contributions to the overall leakage current are subthreshold conduction, gate current and band-to-band-tunneling (BTBT) current, which flows from drain/source to bulk through the reverse biased diffusion junctions. While the latter has been recognized as an important effect in digital nano-CMOS, yet no compact model of it has ever been included in the industry-standard device model BSIM4. In this work, we show that the lack of a BTBT current model leads to discrepancies between SPICE and device-level simulations and that adding a BTBT current source into BSIM4 DC model can correct this. The new current source follows a widely accepted physical model of the BTBT phenomenon with a rectangular junction approximation. Test case results show a good agreement between the new circuit-level simulations and the device-level extracted currents. © 2011 Elsevier Ltd.
First integration of MOSFET band-to-band-tunneling current in BSIM4 / Fabrizio, Ramundo; Nenzi, Paolo; Olivieri, Mauro. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - 44:1(2013), pp. 26-32. [10.1016/j.mejo.2011.07.016]
First integration of MOSFET band-to-band-tunneling current in BSIM4
NENZI, Paolo;OLIVIERI, Mauro
2013
Abstract
Static leakage currents represent a major issue in nano-scale CMOS. In digital VLSI circuits, the most relevant contributions to the overall leakage current are subthreshold conduction, gate current and band-to-band-tunneling (BTBT) current, which flows from drain/source to bulk through the reverse biased diffusion junctions. While the latter has been recognized as an important effect in digital nano-CMOS, yet no compact model of it has ever been included in the industry-standard device model BSIM4. In this work, we show that the lack of a BTBT current model leads to discrepancies between SPICE and device-level simulations and that adding a BTBT current source into BSIM4 DC model can correct this. The new current source follows a widely accepted physical model of the BTBT phenomenon with a rectangular junction approximation. Test case results show a good agreement between the new circuit-level simulations and the device-level extracted currents. © 2011 Elsevier Ltd.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.