A new 2D-FDTD method has been proposed to analyze the dispersion diagram of planar circuits. Traveling wave field effect transistor (TWFET) is a solid state device designed to amplify signals over a wide bandwidth. An analysis of the passive behavior of this device has been performed using mode-matching technique and assuming that the passive structure performances are affected only by the width of the T bar of the gate electrode. To verify such hypothesis and to determine the cut-off frequency of the higher order modes that limits its bandwidth, we have simplified the 2D-FDTD method with a particular normalization, that permits the analysis of the case β=0. The proposed approach was tested calculating the dispersion for some known structures and it has been used in the TWFET characterization
An improved 2D-FDTD method for TWFET bandwidth characterization / Angiolini, C.; D'Inzeo, Guglielmo; Rota, P.. - (1995). (Intervento presentato al convegno Microwave Symposium Digest, 1995., IEEE MTT-S International tenutosi a Orlando, FL nel 16-20 may) [10.1109/MWSYM.1995.405989].
An improved 2D-FDTD method for TWFET bandwidth characterization
D'INZEO, Guglielmo;
1995
Abstract
A new 2D-FDTD method has been proposed to analyze the dispersion diagram of planar circuits. Traveling wave field effect transistor (TWFET) is a solid state device designed to amplify signals over a wide bandwidth. An analysis of the passive behavior of this device has been performed using mode-matching technique and assuming that the passive structure performances are affected only by the width of the T bar of the gate electrode. To verify such hypothesis and to determine the cut-off frequency of the higher order modes that limits its bandwidth, we have simplified the 2D-FDTD method with a particular normalization, that permits the analysis of the case β=0. The proposed approach was tested calculating the dispersion for some known structures and it has been used in the TWFET characterizationI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
