The recent discovery of intrinsic di-interstitial stability against the isolated self-interstitial point defects in GaAs has evidenced the importance of such complexes in, for instance, irradiated GaAs. In this paper, we illustrate and discuss diffusion of such complexes in comparison with isolated self-interstitials. In particular, the diffusion barriers of neutral di-interstitials have been calculated in the framework of density functional theory, showing that, in addition to their being stable, di-interstitials can also diffuse rapidly through the lattice, similarly to isolated self-interstitials.

Migration barriers of neutral As di-interstitials in GaAs / Zollo, Giuseppe; Gala, Fabrizio. - In: NEW JOURNAL OF PHYSICS. - ISSN 1367-2630. - ELETTRONICO. - 14:5(2012), pp. 053036-053036-14. [10.1088/1367-2630/14/5/053036]

Migration barriers of neutral As di-interstitials in GaAs

ZOLLO, Giuseppe;GALA, FABRIZIO
2012

Abstract

The recent discovery of intrinsic di-interstitial stability against the isolated self-interstitial point defects in GaAs has evidenced the importance of such complexes in, for instance, irradiated GaAs. In this paper, we illustrate and discuss diffusion of such complexes in comparison with isolated self-interstitials. In particular, the diffusion barriers of neutral di-interstitials have been calculated in the framework of density functional theory, showing that, in addition to their being stable, di-interstitials can also diffuse rapidly through the lattice, similarly to isolated self-interstitials.
2012
migration; density functional theory; semiconductors; defects
01 Pubblicazione su rivista::01a Articolo in rivista
Migration barriers of neutral As di-interstitials in GaAs / Zollo, Giuseppe; Gala, Fabrizio. - In: NEW JOURNAL OF PHYSICS. - ISSN 1367-2630. - ELETTRONICO. - 14:5(2012), pp. 053036-053036-14. [10.1088/1367-2630/14/5/053036]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/449803
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