The authors present a (2 x 5) matrix amplifier with a DC power consumption as low as 200 mW with 13 dBm of RF output power (@1 dB compression point) achieving 7 dB small-signal gain (residual ripple 0.3 dB) and input and output return losses always better than -14 dB. Designed using the LN05 monolithic process of Thomson Composants Microondes (TCM), the amplifier employs ten MESFETs of 160 mum) gate width and submicron (0.5 mum) gate length, for a total chip area of 2.5 x 3.5 mm2. Broadband performance and very low power consumption make this amplifier very well suited for end-volume realisation of monolithic multiple-stage front-ends in integrated high bit-rate optical receivers.
LOW-DC POWER 2-18 GHZ MONOLITHIC MATRIX AMPLIFIER / S., D'Agostino; D'Inzeo, Guglielmo; G., Gatti; P., Marietti. - In: IEE PROCEEDINGS. MICROWAVES, ANTENNAS AND PROPAGATION. - ISSN 1350-2417. - 141:6(1994), pp. 440-444. [10.1049/ip-map:19941405]
LOW-DC POWER 2-18 GHZ MONOLITHIC MATRIX AMPLIFIER
D'INZEO, Guglielmo;
1994
Abstract
The authors present a (2 x 5) matrix amplifier with a DC power consumption as low as 200 mW with 13 dBm of RF output power (@1 dB compression point) achieving 7 dB small-signal gain (residual ripple 0.3 dB) and input and output return losses always better than -14 dB. Designed using the LN05 monolithic process of Thomson Composants Microondes (TCM), the amplifier employs ten MESFETs of 160 mum) gate width and submicron (0.5 mum) gate length, for a total chip area of 2.5 x 3.5 mm2. Broadband performance and very low power consumption make this amplifier very well suited for end-volume realisation of monolithic multiple-stage front-ends in integrated high bit-rate optical receivers.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
