In this paper we present a novel approach to the evaluation of the dc parameters of a semi-empirical MESFET model: starting from the analytical expression of the drain current derived from a physics-based model, previously proposed, we provide a method to calculate the empirical dc parameters of the so called "Raytheon" model. The comparison between computed and measured dc characteristics is quite satisfactory on GaAs microwave FET's of 1-mu-m or more gate length. By adding to the results, obtained in this work, an adequate model of the stray capacitances, the circuit performance can be optimized using the technological characteristics of active devices.
ANALYTIC PHYSICS-BASED EXPRESSIONS FOR THE EMPIRICAL PARAMETERS OF THE STATZ-PUCEL MESFET MODEL / D'Agostino, Stefano; D'Inzeo, Guglielmo; P., Marietti; L., Tudini; A., Betti Berutto. - In: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. - ISSN 0018-9480. - 40:7(1992), pp. 1576-1581. [10.1109/22.146340]
ANALYTIC PHYSICS-BASED EXPRESSIONS FOR THE EMPIRICAL PARAMETERS OF THE STATZ-PUCEL MESFET MODEL
D'AGOSTINO, Stefano;D'INZEO, Guglielmo;
1992
Abstract
In this paper we present a novel approach to the evaluation of the dc parameters of a semi-empirical MESFET model: starting from the analytical expression of the drain current derived from a physics-based model, previously proposed, we provide a method to calculate the empirical dc parameters of the so called "Raytheon" model. The comparison between computed and measured dc characteristics is quite satisfactory on GaAs microwave FET's of 1-mu-m or more gate length. By adding to the results, obtained in this work, an adequate model of the stray capacitances, the circuit performance can be optimized using the technological characteristics of active devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
