This paper describes the theoretical modeling and design of a traveling-wave FET. The device shows the capability of wide-bandwidth performance, high gain, and could be useful in power applications. The proposed analytical model considers the full modal effects of the three-coupled transmission lines and an accurate analysis of the FET model in the traveling-wave amplifier. Starting from electrode dimensions and active zone doping, such a model allows one to calculate the scattering parameters. Thus, it is possible to analyze the device as a six port network in a circuit analysis program.
ANALYTICAL MODELING AND DESIGN CRITERIA FOR TRAVELING-WAVE FET AMPLIFIERS / Stefano, D'Agostino; D'Inzeo, Guglielmo; Luca, Tudini. - In: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. - ISSN 0018-9480. - 40:2(1992), pp. 202-208. [10.1109/22.120091]
ANALYTICAL MODELING AND DESIGN CRITERIA FOR TRAVELING-WAVE FET AMPLIFIERS
D'INZEO, Guglielmo;
1992
Abstract
This paper describes the theoretical modeling and design of a traveling-wave FET. The device shows the capability of wide-bandwidth performance, high gain, and could be useful in power applications. The proposed analytical model considers the full modal effects of the three-coupled transmission lines and an accurate analysis of the FET model in the traveling-wave amplifier. Starting from electrode dimensions and active zone doping, such a model allows one to calculate the scattering parameters. Thus, it is possible to analyze the device as a six port network in a circuit analysis program.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
