In this letter, the effect of deposition temperature on the barrier height between indium tin oxide (ITO) and crystalline silicon (c-Si) is presented. ITO films have been deposited by RF magnetron sputtering in the range between room temperature and 200 degrees C on both p-and n-type doped c-Si substrates. From current-voltage and capacitance-voltage characteristics of the ITO/c-Si junctions, we found that ITO deposited on 1-Omega . cm n-type doped silicon forms a rectifying junction with barrier heights varying from 0.9 to 0.3 eV, while at room temperature, an ohmic behavior on 1-Omega . cm p-type c-Si is obtained.
Electrical Properties of ITO/Crystalline-Silicon Contact at Different Deposition Temperatures / DE CESARE, Giampiero; Caputo, Domenico; Mario, Tucci. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 33:3(2012), pp. 327-329. [10.1109/led.2011.2180356]
Electrical Properties of ITO/Crystalline-Silicon Contact at Different Deposition Temperatures
DE CESARE, Giampiero;CAPUTO, Domenico;
2012
Abstract
In this letter, the effect of deposition temperature on the barrier height between indium tin oxide (ITO) and crystalline silicon (c-Si) is presented. ITO films have been deposited by RF magnetron sputtering in the range between room temperature and 200 degrees C on both p-and n-type doped c-Si substrates. From current-voltage and capacitance-voltage characteristics of the ITO/c-Si junctions, we found that ITO deposited on 1-Omega . cm n-type doped silicon forms a rectifying junction with barrier heights varying from 0.9 to 0.3 eV, while at room temperature, an ohmic behavior on 1-Omega . cm p-type c-Si is obtained.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
