We present a study on the design, growth and optical characterization of a GaN/AlGaN microcavity for the enhancement of second order non linear effects. The proposed system exploits the high second order nonlinear optical response of GaN due to the non centrosymmetric crystalline structure of this material. It consists of a GaN cavity embedded between two GaN/AlGaN Distributed Bragg Reflectors designed for a reference mode coincident with a second harmonic field generated in the near UV region (~ 400 nm). Critical issues for this target are the crystalline quality of the material, together with sharp and abrupt interfaces among the multi-stacked layers. A detailed investigation on the growth evolution of GaN and AlGaN epilayers in such a configuration is reported, with the aim to obtain high quality factor in the desiderated spectral range. Non linear second harmonic generation experiments have been performed and the results were compared with bulk GaN sample, highlighting the effect of the microcavity on the non linear optical response of this material.
GaN/AlGaN photonic crystals designed for the enhancement of non linear effects / V., Tasco; I., Tarantini; A., Campa; T., Stomeo; G., Epifani; A., Passaseo; M., Braccini; Larciprete, Maria Cristina; Sibilia, Concetta; F. A., Bovino. - ELETTRONICO. - 7713:(2010), p. 77131Q. (Intervento presentato al convegno Fotonica 2010, 12° COnvegno Nazionale delle Tecnologie Fotoniche tenutosi a Pisa nel 25-27 Maggio 2010) [10.1117/12.854381].
GaN/AlGaN photonic crystals designed for the enhancement of non linear effects
LARCIPRETE, Maria Cristina;SIBILIA, Concetta;
2010
Abstract
We present a study on the design, growth and optical characterization of a GaN/AlGaN microcavity for the enhancement of second order non linear effects. The proposed system exploits the high second order nonlinear optical response of GaN due to the non centrosymmetric crystalline structure of this material. It consists of a GaN cavity embedded between two GaN/AlGaN Distributed Bragg Reflectors designed for a reference mode coincident with a second harmonic field generated in the near UV region (~ 400 nm). Critical issues for this target are the crystalline quality of the material, together with sharp and abrupt interfaces among the multi-stacked layers. A detailed investigation on the growth evolution of GaN and AlGaN epilayers in such a configuration is reported, with the aim to obtain high quality factor in the desiderated spectral range. Non linear second harmonic generation experiments have been performed and the results were compared with bulk GaN sample, highlighting the effect of the microcavity on the non linear optical response of this material.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.