The growth of Single Wall Carbon Nanotubes (SWCNTs) on selected patterned substrates is the fundamental step for the realization of many devices based on SWCNTs. In this work we show that the growth technique based on Chemical Vapor Deposition (CVD) is perfectly suitable for the realization of prototypal devices such as efficient field emitters. Many different characterization techniques are used to check the SWCNT growth. Scanning Electron Microscopy (SEM) and Raman spectroscopy are extensively used to monitor the structural properties of our samples. We characterize the field emission in our systems, and investigate the realization of lithographically patterned multilayer structures for the realization of a multielectrode device able to control the intensity of field emission.

Controlled growth of ordered SWCNTs for the realization of multielectrode Field Emitter Devices / F., Brunetti; P., Regoliosi; A., Reale; A. D., Carlo; M. L., Terranova; S., Orlanducci; A., Fiori; E., Tamburri; V., Sessa; Ciorba, Alessandro; Rossi, Marco; M., Cirillo; V., Merlo. - STAMPA. - (2004), pp. 534-536. (Intervento presentato al convegno 4th IEEE Conference on Nanotechnology tenutosi a Munich, GERMANY nel AUG 16-19, 2004).

Controlled growth of ordered SWCNTs for the realization of multielectrode Field Emitter Devices

CIORBA, ALESSANDRO;ROSSI, Marco;
2004

Abstract

The growth of Single Wall Carbon Nanotubes (SWCNTs) on selected patterned substrates is the fundamental step for the realization of many devices based on SWCNTs. In this work we show that the growth technique based on Chemical Vapor Deposition (CVD) is perfectly suitable for the realization of prototypal devices such as efficient field emitters. Many different characterization techniques are used to check the SWCNT growth. Scanning Electron Microscopy (SEM) and Raman spectroscopy are extensively used to monitor the structural properties of our samples. We characterize the field emission in our systems, and investigate the realization of lithographically patterned multilayer structures for the realization of a multielectrode device able to control the intensity of field emission.
2004
4th IEEE Conference on Nanotechnology
chemical vapor deposition; field emission; nanovalves; single wall carbon nanotubes
04 Pubblicazione in atti di convegno::04b Atto di convegno in volume
Controlled growth of ordered SWCNTs for the realization of multielectrode Field Emitter Devices / F., Brunetti; P., Regoliosi; A., Reale; A. D., Carlo; M. L., Terranova; S., Orlanducci; A., Fiori; E., Tamburri; V., Sessa; Ciorba, Alessandro; Rossi, Marco; M., Cirillo; V., Merlo. - STAMPA. - (2004), pp. 534-536. (Intervento presentato al convegno 4th IEEE Conference on Nanotechnology tenutosi a Munich, GERMANY nel AUG 16-19, 2004).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/417909
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