We reported the design and realization of a carbon nanotube-based integrated multielectrode device. Patterned Si/SiO 2/Nb/Nb 2O 5 multilayer was successfully realized by means of a few, common photolithographic processes with the minimum number of mask alignment steps. Such structure constitutes the patterned substrate of successive Hot Filament Chemical Vapour Deposition (HFCVD) process. Selective growth of highly oriented SWCNT arrays was obtained in the predefined locations while survival of the entire structure was achieved. Field emission measurements of such materials were carried out. Good and reproducible field emission behaviour has been observed in several realized structures.
Towards the realization of a multielectrode field emission device: Controlled growth of Single Wall Carbon Nanotube arrays / F., Brunetti; A. D., Carlo; R., Riccitelli; A., Reale; P., Regoliosi; M., Lucci; A., Fiori; M. L., Terranova; S., Orlanducci; V., Sessa; Ciorba, Alessandro; Rossi, Marco; M., Cirillo; V., Merlo; P., Lugli; C., Falessi. - STAMPA. - 5838:(2005), pp. 154-161. (Intervento presentato al convegno Nanotechnology II tenutosi a Seville nel 9 May 2005 through 11 May 2005) [10.1117/12.609382].
Towards the realization of a multielectrode field emission device: Controlled growth of Single Wall Carbon Nanotube arrays
CIORBA, ALESSANDRO;ROSSI, Marco;
2005
Abstract
We reported the design and realization of a carbon nanotube-based integrated multielectrode device. Patterned Si/SiO 2/Nb/Nb 2O 5 multilayer was successfully realized by means of a few, common photolithographic processes with the minimum number of mask alignment steps. Such structure constitutes the patterned substrate of successive Hot Filament Chemical Vapour Deposition (HFCVD) process. Selective growth of highly oriented SWCNT arrays was obtained in the predefined locations while survival of the entire structure was achieved. Field emission measurements of such materials were carried out. Good and reproducible field emission behaviour has been observed in several realized structures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
