Single crystals of semi-insulating (100) GaAs implanted with 140 keV Zn+ at elevated temperature (110+/-10 degrees C) to a dose of 10(14)/cm(2) were treated with low power laser pulses of 4.5 MW/cm(2). Irradiation induced defect structures in as-implanted GaAs and the degree of restoration after their low power pulsed laser annealing (LPPLA) were investigated by high resolution transmission electron microscopy (HRTEM) of cross-sectional and planar specimens. Digital filtering (by Bragg filters) was applied to experimental HRTEM images to extract additional information about the details in the structure of radiation-induced defect cluster zones.
High-resolution electron microscopy of radiation damage in implanted and laser treated GaAs / N., Pashov; M., Kalitzova; Rossi, Marco; G., Vitali. - In: CONFERENCE SERIES. - ISSN 0305-2346. - STAMPA. - 134:(1993), pp. 535-538. ( 8th Royal-Microscopical-Society Conference: Microscopy of Semiconducting Materials 1993 Oxford 5-8 aprile 1993).
High-resolution electron microscopy of radiation damage in implanted and laser treated GaAs
ROSSI, MarcoWriting – Original Draft Preparation
;
1993
Abstract
Single crystals of semi-insulating (100) GaAs implanted with 140 keV Zn+ at elevated temperature (110+/-10 degrees C) to a dose of 10(14)/cm(2) were treated with low power laser pulses of 4.5 MW/cm(2). Irradiation induced defect structures in as-implanted GaAs and the degree of restoration after their low power pulsed laser annealing (LPPLA) were investigated by high resolution transmission electron microscopy (HRTEM) of cross-sectional and planar specimens. Digital filtering (by Bragg filters) was applied to experimental HRTEM images to extract additional information about the details in the structure of radiation-induced defect cluster zones.| File | Dimensione | Formato | |
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