The electroreflectance spectrum of GaSe, measured by Balzarotti et al. (1971) between 3.2 and 4.1 eV, is reanalyzed using more accurate values for the optical constants ϵ1 and ϵ2. The previous interpretation cannot be maintained because a lineshape analysis by itself is not sufficient to assign the structure at 3.4eV to an M1 interband transition. Other arguments and further reflectivity measurements suggest this structure to be due to an M0 resonant exciton, with spin—orbit partner at 3.7 eV.
Electroreflectance of GaSe: the interpretation of the structure above the edge / Piacentini, Mario. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 19:8(1976), pp. 775-778. [10.1016/0038-1098(76)90916-9]
Electroreflectance of GaSe: the interpretation of the structure above the edge
PIACENTINI, Mario
1976
Abstract
The electroreflectance spectrum of GaSe, measured by Balzarotti et al. (1971) between 3.2 and 4.1 eV, is reanalyzed using more accurate values for the optical constants ϵ1 and ϵ2. The previous interpretation cannot be maintained because a lineshape analysis by itself is not sufficient to assign the structure at 3.4eV to an M1 interband transition. Other arguments and further reflectivity measurements suggest this structure to be due to an M0 resonant exciton, with spin—orbit partner at 3.7 eV.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
