We present a determination of the complex dielectric function of si(111) 2 multiplied by 1, GaAs(110) and GaP(110) surfaces by using polarized Surface Differential Reflectivity technique. The effective number of electrons per atom participating in the optical transitions is calculated for energies up to 4. 0 ev for each surface.
DETERMINATION OF THE COMPLEX DIELECTRIC FUNCTION OF SI(111) 2X1 GAAS(110) AND GAP(110) SURFACES BY POLARIZED SURFACE DIFFERENTIAL REFLECTIVITY / A., Cricenti; S., Selci; Felici, Anna Candida; C., Goletti; Z., Yong; G., Chiarotti. - In: PHYSICA SCRIPTA. - ISSN 0281-1847. - 38:(1988), pp. 199-203. [10.1088/0031-8949/38/2/017]
DETERMINATION OF THE COMPLEX DIELECTRIC FUNCTION OF SI(111) 2X1 GAAS(110) AND GAP(110) SURFACES BY POLARIZED SURFACE DIFFERENTIAL REFLECTIVITY
FELICI, Anna Candida;
1988
Abstract
We present a determination of the complex dielectric function of si(111) 2 multiplied by 1, GaAs(110) and GaP(110) surfaces by using polarized Surface Differential Reflectivity technique. The effective number of electrons per atom participating in the optical transitions is calculated for energies up to 4. 0 ev for each surface.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.