Low-power pulsed-laser annealing was applied to Zn+-implanted InP samples. In order to avoid surface oxidation during the treatment, the laser irradiation was carried out in inert ambients of different gases (Ar or N2) at different pressures. Reflection high energy electron diffraction (RHEED), Rutherford backscattering spectroscopy (RBS) and electrical measurements were used to analyse the physical properties of the samples before and after the laser annealing process. In particular, it has been possible to demonstrate that the chemical properties of the gas used play a crucial role in the electrical carrier activation (about 80%) of the processed InP sample.
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|Titolo:||Electrical Carrier Activation in Zn+ implanted and low-power Pulsed Laser Annealed InP in Nitrogen Atmosphere|
|Data di pubblicazione:||1999|
|Appartiene alla tipologia:||01a Articolo in rivista|