Angle-resolved Photoelectron spectroscopy and surface differential reflectivity have been used to study the electronic structure of Si(100):Sb-1 X 1 and Si(100):Sb-2 X 1 surfaces. For both surfaces, one occupied surface-state band has been mapped along the [010] and [011] directions. Both surfaces show a semiconducting behavior with a gap of 1.6 eV for the 1 X 1-Sb and 1.4 eV for the 2 X 1-Sb surface. A minimum-energy position at the Fermi level is derived for the empty surface-state band. The results are also compared with those obtained for the clean Si(100)2 X 1 surface.
SI(100)1X1-SB AND SI(100)2X1-SB SURFACES STUDIED WITH ANGLE-RESOLVED PHOTOEMISSION AND SURFACE DIFFERENTIAL REFLECTIVITY / A., Cricenti; S., Selci; Felici, Anna Candida; L., Ferrari; G., Contini; G., Chiarotti. - In: PHYSICAL REVIEW B, SOLID STATE. - ISSN 0556-2805. - 47:(1993), pp. 15745-15749. [10.1103/PhysRevB.47.15745]
SI(100)1X1-SB AND SI(100)2X1-SB SURFACES STUDIED WITH ANGLE-RESOLVED PHOTOEMISSION AND SURFACE DIFFERENTIAL REFLECTIVITY
FELICI, Anna Candida;
1993
Abstract
Angle-resolved Photoelectron spectroscopy and surface differential reflectivity have been used to study the electronic structure of Si(100):Sb-1 X 1 and Si(100):Sb-2 X 1 surfaces. For both surfaces, one occupied surface-state band has been mapped along the [010] and [011] directions. Both surfaces show a semiconducting behavior with a gap of 1.6 eV for the 1 X 1-Sb and 1.4 eV for the 2 X 1-Sb surface. A minimum-energy position at the Fermi level is derived for the empty surface-state band. The results are also compared with those obtained for the clean Si(100)2 X 1 surface.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
