Two different Sb-induced phases have been found upon annealing on freshly evaporated Si(100)2 x 1 surfaces. The surface electronic structures of the two phases (1 x 1-Sb and 2 x 1-Sb) have been studied with surface differential reflectivity (SDR) and angle-resolved photoelectron spectroscopy (ARUPS). Both techniques show the existence of a gap of approximately 1.6 and 1.4 eV for the two phases, with the empty state located near the Fermi level.
ELECTRONIC STATES ON SI(100)2X1-SB - EXISTENCE OF 2 SEMICONDUCTING PHASES / A., Cricenti; S., Selci; Felici, Anna Candida; L., Ferrari; G., Chiarotti. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - 86:(1993), pp. 667-670. [10.1016/0038-1098(93)90836-c]
ELECTRONIC STATES ON SI(100)2X1-SB - EXISTENCE OF 2 SEMICONDUCTING PHASES
FELICI, Anna Candida;
1993
Abstract
Two different Sb-induced phases have been found upon annealing on freshly evaporated Si(100)2 x 1 surfaces. The surface electronic structures of the two phases (1 x 1-Sb and 2 x 1-Sb) have been studied with surface differential reflectivity (SDR) and angle-resolved photoelectron spectroscopy (ARUPS). Both techniques show the existence of a gap of approximately 1.6 and 1.4 eV for the two phases, with the empty state located near the Fermi level.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
