The post-implantation effect of high frequency electromagnetic field (HFEMF) on the microstructure and electrical properties of high dose Te+ and Bi+ implanted (100) Si was investigated by cross-sectional high resolution transmission electron microscopy and fourpoint probe electrical measurements. Te and Bi nanoclusters (NCs) embedded in amorphized Si have been formed by ion implantation. Post-implantation treatment with HFEMF reorganizes the cluster shape and distribution by stimulation of spinodal decomposition and ordering of Te NCs to a percolation system. The effect of HFEMF on Bi NCs is assumed to be connected with the formation of electrical microcurrents causing local heating of their interfaces with the a-Si matrix. The results of electrical measurements show that the HFEMF application reduces the sheet resistance by a factor of about 6 for Te+ and about 3 for Bi+ irradiation.
Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field / M., Kalitzova; A., Peeva; V., Ignatova; O. I., Lebedev; Zollo, Giuseppe; G., Vitali. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS. - ISSN 0168-583X. - STAMPA. - 242:1-2(2006), pp. 209-213. ( 14th International Conference on Ion Beam Modification of Materials (IBMM 2004) Pacific Grove, CA SEP 05-10, 2004) [10.1016/j.nimb.2005.08.017].
Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field
ZOLLO, Giuseppe;
2006
Abstract
The post-implantation effect of high frequency electromagnetic field (HFEMF) on the microstructure and electrical properties of high dose Te+ and Bi+ implanted (100) Si was investigated by cross-sectional high resolution transmission electron microscopy and fourpoint probe electrical measurements. Te and Bi nanoclusters (NCs) embedded in amorphized Si have been formed by ion implantation. Post-implantation treatment with HFEMF reorganizes the cluster shape and distribution by stimulation of spinodal decomposition and ordering of Te NCs to a percolation system. The effect of HFEMF on Bi NCs is assumed to be connected with the formation of electrical microcurrents causing local heating of their interfaces with the a-Si matrix. The results of electrical measurements show that the HFEMF application reduces the sheet resistance by a factor of about 6 for Te+ and about 3 for Bi+ irradiation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
