Recent studies have shown evidence of self-interstitial aggregation in ion-implanted Si, resulting in nanoscopic damage structures. Similarly, self-interstitial atoms are expected to play an important role for defect clustering in ion-implanted GaAs. We report results on stable neutral di-interstitial complex configurations in GaAs composed of both As and Ga atoms addressed by first-principles total-energy calculations based on density-functional theory.
Properties of intrinsic di-interstitials in GaAs / Zollo, Giuseppe; Y. J., Lee; R. M., Nieminen. - In: JOURNAL OF PHYSICS. CONDENSED MATTER. - ISSN 0953-8984. - STAMPA. - 16:49(2004), pp. 8991-9000. [10.1088/0953-8984/16/49/014]
Properties of intrinsic di-interstitials in GaAs
ZOLLO, Giuseppe;
2004
Abstract
Recent studies have shown evidence of self-interstitial aggregation in ion-implanted Si, resulting in nanoscopic damage structures. Similarly, self-interstitial atoms are expected to play an important role for defect clustering in ion-implanted GaAs. We report results on stable neutral di-interstitial complex configurations in GaAs composed of both As and Ga atoms addressed by first-principles total-energy calculations based on density-functional theory.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
