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EnglishRecent studies have shown evidence of self-interstitial aggregation in ion-implanted Si, resulting in nanoscopic damage structures. Similarly, self-interstitial atoms are expected to play an important role for defect clustering in ion-implanted GaAs. We report results on stable neutral di-interstitial complex configurations in GaAs composed of both As and Ga atoms addressed by first-principles total-energy calculations based on density-functional theory.
http://hdl.handle.net/11573/37876| Titolo: | Properties of intrinsic di-interstitials in GaAs |
| Autori interni: | ZOLLO, Giuseppe |
| Data di pubblicazione: | 2004 |
| Rivista: | JOURNAL OF PHYSICS. CONDENSED MATTER |
| Abstract: | Recent studies have shown evidence of self-interstitial aggregation in ion-implanted Si, resulting in nanoscopic damage structures. Similarly, self-interstitial atoms are expected to play an important role for defect clustering in ion-implanted GaAs. We report results on stable neutral di-interstitial complex configurations in GaAs composed of both As and Ga atoms addressed by first-principles total-energy calculations based on density-functional theory. |
| Handle: | http://hdl.handle.net/11573/37876 |
| Appare nelle tipologie: | 01.a Pubblicazione su Rivista |
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