Temperature measurement is becoming increasingly important in integrated circuits and microsystems; nevertheless, existing techniques for the integration of high accuracy, high precision temperature sensors are not optimal for deep sub-micron CMOS processes. Here we describe a low voltage, low power, compact, high accuracy, high precision temperature sensor for deep sub-micron CMOS systems; our approach takes advantage of charge balancing and charge sharing for low current consumption, does not use resistors for compactness, and takes advantage of both PTAT and autozero techniques for high accuracy and high precision; the circuit can be operated at low supply voltages. As a proof of concept, we report transistor level simulations in a standard 0.13 mum process; the sensor only sinks about 6 muA from a 1.2 V supply voltage, achieving a power dissipation as low as 7.2 muW.

Low voltage, low power, compact, high accuracy, high precision PTAT temperature sensor for deep sub-micron CMOS systems / C., Falconi; M., Fratini; A., Damico; Scotti, Giuseppe; Trifiletti, Alessandro. - (2008). (Intervento presentato al convegno 2008 IEEE International Symposium on Circuits and Systems tenutosi a Seattle, Washington, USA).

Low voltage, low power, compact, high accuracy, high precision PTAT temperature sensor for deep sub-micron CMOS systems

SCOTTI, Giuseppe;TRIFILETTI, Alessandro
2008

Abstract

Temperature measurement is becoming increasingly important in integrated circuits and microsystems; nevertheless, existing techniques for the integration of high accuracy, high precision temperature sensors are not optimal for deep sub-micron CMOS processes. Here we describe a low voltage, low power, compact, high accuracy, high precision temperature sensor for deep sub-micron CMOS systems; our approach takes advantage of charge balancing and charge sharing for low current consumption, does not use resistors for compactness, and takes advantage of both PTAT and autozero techniques for high accuracy and high precision; the circuit can be operated at low supply voltages. As a proof of concept, we report transistor level simulations in a standard 0.13 mum process; the sensor only sinks about 6 muA from a 1.2 V supply voltage, achieving a power dissipation as low as 7.2 muW.
2008
2008 IEEE International Symposium on Circuits and Systems
Temperatrure Sensor CMOS
04 Pubblicazione in atti di convegno::04b Atto di convegno in volume
Low voltage, low power, compact, high accuracy, high precision PTAT temperature sensor for deep sub-micron CMOS systems / C., Falconi; M., Fratini; A., Damico; Scotti, Giuseppe; Trifiletti, Alessandro. - (2008). (Intervento presentato al convegno 2008 IEEE International Symposium on Circuits and Systems tenutosi a Seattle, Washington, USA).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/378752
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