We have studied the effect on ion irradiation in short period SimGen superlattices by using classical molecular dynamics.We have analyzed the degree of amorphization, mixing of layers, displacement lengths for atoms, etc., in order to find out what kind of effects collision cascades cause in the system. Particular interest was put on the effect of pseudomorphic strain. We found that the strain does not have any influence on the outcome in the bulk whereas on the surface there is a clear effect on the adatom production. Furthermore, we also found that there is an asymmetry in the impurity distribution in the layers that we concluded to be an atomic size effect.
Ion-irradiation-induced effects in Si(m)Ge(n) superlattices / J., Tarus; Zollo, Giuseppe. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 69:(2004), pp. 235307-1-235307-5. [10.1103/PhysRevB.69.235307]
Ion-irradiation-induced effects in Si(m)Ge(n) superlattices
ZOLLO, Giuseppe
2004
Abstract
We have studied the effect on ion irradiation in short period SimGen superlattices by using classical molecular dynamics.We have analyzed the degree of amorphization, mixing of layers, displacement lengths for atoms, etc., in order to find out what kind of effects collision cascades cause in the system. Particular interest was put on the effect of pseudomorphic strain. We found that the strain does not have any influence on the outcome in the bulk whereas on the surface there is a clear effect on the adatom production. Furthermore, we also found that there is an asymmetry in the impurity distribution in the layers that we concluded to be an atomic size effect.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
