XHRTEM observations of different damage structures in high temperature implanted GaAs

140 keV Zn+ ions have been implantedon (1 0 0) GaAs surfaces at a dose of 1014 cm 2 andd ifferent ion fluxes and substrate temperatures. The resulting damage in the implanted samples has been studied by cross sectional high resolution transmission electron microscopy showing different features depending on the implantation substrate temperature and on the ion flux. The observed damage is discussed in terms of the competing mechanisms of ion beam induced amorphization and ion beam induced epitaxial crystallization showing that the balance between them strongly affects both the amount of damage and its typology.