(1 0 0)-oriented silicon substrates were implanted with50 keV Te+ or Pb+ ions at room temperature withdoses varied in the range 1 1015 to 1 1018 cm 2. Formation of ion beam-assisted Te and Pb nanocrystals in the layer amorphised by the implantation has been established. The accumulation of impurities, sputtering and formation of high-dose implantation profile was modelled by a dynamic computer simulation code. The calculated concentration profiles at various ion fluences were compared with the measured RBS profiles and the depth distribution of ion beaminduced nanoclusters obtained by cross-sectional transmission electron microscopy (XTEM), in an attempt to clarify the role of these effects in the formation of precipitates at high-dose irradiation conditions.
Dose-dependent dynamics of nanocluster distribution in silicon implanted with Te+ and Pb+ ions: computer simulation and TEM study / P., Bankov; M., Kalitzova; D., Karpuzov; Zollo, Giuseppe; Vitali, G.; Pizzuto, C.; Angelov, C. H.; Faure', J.; Kilian, L.. - In: VACUUM. - ISSN 0042-207X. - STAMPA. - 69:(2003), pp. 455-460. [10.1016/S0042-207X(02)00376-7]
Dose-dependent dynamics of nanocluster distribution in silicon implanted with Te+ and Pb+ ions: computer simulation and TEM study
ZOLLO, Giuseppe;
2003
Abstract
(1 0 0)-oriented silicon substrates were implanted with50 keV Te+ or Pb+ ions at room temperature withdoses varied in the range 1 1015 to 1 1018 cm 2. Formation of ion beam-assisted Te and Pb nanocrystals in the layer amorphised by the implantation has been established. The accumulation of impurities, sputtering and formation of high-dose implantation profile was modelled by a dynamic computer simulation code. The calculated concentration profiles at various ion fluences were compared with the measured RBS profiles and the depth distribution of ion beaminduced nanoclusters obtained by cross-sectional transmission electron microscopy (XTEM), in an attempt to clarify the role of these effects in the formation of precipitates at high-dose irradiation conditions.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
