(1 0 0)-oriented silicon substrates were implanted with50 keV Te+ or Pb+ ions at room temperature withdoses varied in the range 1 1015 to 1 1018 cm 2. Formation of ion beam-assisted Te and Pb nanocrystals in the layer amorphised by the implantation has been established. The accumulation of impurities, sputtering and formation of high-dose implantation profile was modelled by a dynamic computer simulation code. The calculated concentration profiles at various ion fluences were compared with the measured RBS profiles and the depth distribution of ion beaminduced nanoclusters obtained by cross-sectional transmission electron microscopy (XTEM), in an attempt to clarify the role of these effects in the formation of precipitates at high-dose irradiation conditions.
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|Titolo:||Dose-dependent dynamics of nanocluster distribution in silicon implanted with Te+ and Pb+ ions: computer simulation and TEM study|
|Data di pubblicazione:||2003|
|Appartiene alla tipologia:||01a Articolo in rivista|