The microstructural changes which occur during high dose Zn+ irradiation of (100) Si have been studied by electron microscopy both in diffraction (TEM) and in phase contrast (HRTEM) together with other experimental techniques and computer simulation of the implantation process. The samples have bee implanted at 50 keV with a current density of 10 microA/cm^2 and a dose ranging from 10^15 cm^-2 to 10^18 cm^-2. The characterization evidences that Zn-Si superlattice is formed depending on the implanted dose.

Ion -Beam Induced Crystallization and Amorphization in Zn+ implanted Silicon / Kalitzova, M.; Yankov, R. A.; Simov, S.; Angelov, C. H.; Vitali, G.; Pizzuto, C.; Zollo, Giuseppe; Manno, D.; Faure, J.; Kilian, L.; Bonhomme, P.. - In: ZURNAL FIZICNIH DOSLIDZEN. - ISSN 1027-4642. - STAMPA. - 2:(1998), pp. 205-212.

Ion -Beam Induced Crystallization and Amorphization in Zn+ implanted Silicon

ZOLLO, Giuseppe;
1998

Abstract

The microstructural changes which occur during high dose Zn+ irradiation of (100) Si have been studied by electron microscopy both in diffraction (TEM) and in phase contrast (HRTEM) together with other experimental techniques and computer simulation of the implantation process. The samples have bee implanted at 50 keV with a current density of 10 microA/cm^2 and a dose ranging from 10^15 cm^-2 to 10^18 cm^-2. The characterization evidences that Zn-Si superlattice is formed depending on the implanted dose.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11573/37810
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