We carry on a theoretical investigation of the conditions for the appearance and/or modification of spin ordering in a dilute magnetic semiconductor that is in contact with a ferromagnetic metal. We show that the magnetic proximity effect has a rather complex physical nature in this system. Allowing for the hybridization between the ferromagnetic metal and semiconductor electron states, we calculate the spin polarization and spin susceptibility of carriers in the semiconductor layer near the contact. The peculiar mechanism of indirect exchange coupling that occurs between local spins dissolved in the semiconductor host when a dilute magnetic semiconductor is in contact with a ferromagnetic metal is analyzed. The structure of the proximity-induced ordering of local moments in a dilute magnetic semiconductor is qualitatively described within a mean-field approach. On the basis of our results, we interpret the experimental data on Fe/(Ga,Mn)As and Py/(Ga,Mn)As layered structures.
Proximity-induced spin ordering at the interface between a ferromagnetic metal and a magnetic semiconductor / V. N., Menshov; V. V., Tugushev; Caprara, Sergio; E. V., Chulkov. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 81:23(2010), pp. 235212-1-235212-14. [10.1103/physrevb.81.235212]
Proximity-induced spin ordering at the interface between a ferromagnetic metal and a magnetic semiconductor
CAPRARA, SERGIO;
2010
Abstract
We carry on a theoretical investigation of the conditions for the appearance and/or modification of spin ordering in a dilute magnetic semiconductor that is in contact with a ferromagnetic metal. We show that the magnetic proximity effect has a rather complex physical nature in this system. Allowing for the hybridization between the ferromagnetic metal and semiconductor electron states, we calculate the spin polarization and spin susceptibility of carriers in the semiconductor layer near the contact. The peculiar mechanism of indirect exchange coupling that occurs between local spins dissolved in the semiconductor host when a dilute magnetic semiconductor is in contact with a ferromagnetic metal is analyzed. The structure of the proximity-induced ordering of local moments in a dilute magnetic semiconductor is qualitatively described within a mean-field approach. On the basis of our results, we interpret the experimental data on Fe/(Ga,Mn)As and Py/(Ga,Mn)As layered structures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.