Most power electronic modules are specifically designed for the customer and this entails intense labour during the production phase. The monolithic integration for power electronic devices in the form of power IC has not proven to be efficient, neither from a technical, nor from an economic point of view. In a typical high power module the power devices are assembled on a heatsink and driver, sensor and protection circuits are mounted on separate PCBs assembled to the power devices. This results in low performance and high cost. Higher integrated power modules are produced assembling power devices in die format onto a DCB (Direct Copper Bonding) substrate and interconnect them by wire bonding technique [1]. The relative driver, sensor and protection circuits are surface mounted on a separate PCB assembled with the former. Unfortunately, there are certain fundamental limitations to the above described packaging mainly due to wire bonding. In spite the fact that this technology has made enormous progress in recent years, it still limits the possibility of three dimensional packaging and puts major limits on creating low EMI and high frequency circuits. In this paper we present an already tested technology for compliant interconnection of power devices that overcomes the limitations of wire-bonding. In the development of this new technology, compatibility with wire-bonding has been strongly enforced to provide a solution that could be retrofitted to existing modules.

Transfer layer technology for the packaging of high power modules / Balucani, Marco; Nenzi, Paolo; Rocco, Crescenzi; Leonid, Dolgyi; Alexey, Klyshko; Vitaly, Bondarenko. - (2010), pp. 1-6. (Intervento presentato al convegno 3rd Electronics System Integration Technology Conference, ESTC 2010 tenutosi a Berlin; Germany nel 13 September 2010 through 16 September 2010) [10.1109/estc.2010.5642974].

Transfer layer technology for the packaging of high power modules

BALUCANI, Marco;NENZI, Paolo;
2010

Abstract

Most power electronic modules are specifically designed for the customer and this entails intense labour during the production phase. The monolithic integration for power electronic devices in the form of power IC has not proven to be efficient, neither from a technical, nor from an economic point of view. In a typical high power module the power devices are assembled on a heatsink and driver, sensor and protection circuits are mounted on separate PCBs assembled to the power devices. This results in low performance and high cost. Higher integrated power modules are produced assembling power devices in die format onto a DCB (Direct Copper Bonding) substrate and interconnect them by wire bonding technique [1]. The relative driver, sensor and protection circuits are surface mounted on a separate PCB assembled with the former. Unfortunately, there are certain fundamental limitations to the above described packaging mainly due to wire bonding. In spite the fact that this technology has made enormous progress in recent years, it still limits the possibility of three dimensional packaging and puts major limits on creating low EMI and high frequency circuits. In this paper we present an already tested technology for compliant interconnection of power devices that overcomes the limitations of wire-bonding. In the development of this new technology, compatibility with wire-bonding has been strongly enforced to provide a solution that could be retrofitted to existing modules.
2010
3rd Electronics System Integration Technology Conference, ESTC 2010
Fundamental limitations; High costs; High frequency circuits
04 Pubblicazione in atti di convegno::04b Atto di convegno in volume
Transfer layer technology for the packaging of high power modules / Balucani, Marco; Nenzi, Paolo; Rocco, Crescenzi; Leonid, Dolgyi; Alexey, Klyshko; Vitaly, Bondarenko. - (2010), pp. 1-6. (Intervento presentato al convegno 3rd Electronics System Integration Technology Conference, ESTC 2010 tenutosi a Berlin; Germany nel 13 September 2010 through 16 September 2010) [10.1109/estc.2010.5642974].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/376742
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