Second harmonic generation was observed experimentally from GaN/Al50Ga50N multilayers grown on sapphire substrate by means of the rotational Maker fringe technique at a fundamental beam wavelength of 1064 nm. From a single thick GaN layer (302 nm), the d33 of GaN was evaluated and compared to the nonlinear coefficient obtained from measurements on several thin multilayer samples. Results show that the process of growing several thin, alternating layers does not cause the deterioration of the effective nonlinear susceptibility, which is 4.82 pm/V for GaN and 1.20 pm/V for Al50Ga50N, consistent with known values obtained for thick substrates
Second harmonic generation in GaN/Al(sub50)Ga(sub 50)N films deposited by metal-organic chemical vapor deposition / Larciprete, Maria Cristina; Centini, Marco; Belardini, Alessandro; L., Sciscione; Bertolotti, Mario; Sibilia, Concetta; M., Scalora; A., Passaseo; B., Poti'. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 89:(2006), pp. 131105-1-131105-3. [10.1063/1.2357022]
Second harmonic generation in GaN/Al(sub50)Ga(sub 50)N films deposited by metal-organic chemical vapor deposition
LARCIPRETE, Maria Cristina;CENTINI, MARCO;BELARDINI, ALESSANDRO;BERTOLOTTI, Mario;SIBILIA, Concetta;
2006
Abstract
Second harmonic generation was observed experimentally from GaN/Al50Ga50N multilayers grown on sapphire substrate by means of the rotational Maker fringe technique at a fundamental beam wavelength of 1064 nm. From a single thick GaN layer (302 nm), the d33 of GaN was evaluated and compared to the nonlinear coefficient obtained from measurements on several thin multilayer samples. Results show that the process of growing several thin, alternating layers does not cause the deterioration of the effective nonlinear susceptibility, which is 4.82 pm/V for GaN and 1.20 pm/V for Al50Ga50N, consistent with known values obtained for thick substratesI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
