Research on band-gap engineering of Silicon-Germanium heterostructures for the realization of Quantum Cascade (QC) structures emitting in the Terahertz (THz) spectral region has recently attracted a vast interest. While several successful attempts have been reported using hole-based (p-type) intersubband transitions, very few results have been published on systems exploiting electrons (n-type). In this work we present the optical and structural characterization of n-type heterostructures made either of tensely-strained Si (sSi) quantum well (QW) confined between low Ge content Si1-xGex barriers [0.2
n-type SiGe heterostructures for THz intersubband transitions / DE SETA, M; Capellini, G; Ciasca, Gabriele; Busby, Y; Evangelisti, F; Nicotra, G; Nardone, M; Ortolani, Michele; Virgilio, M; Grosso, G; Nucara, Alessandro; Calvani, Paolo. - STAMPA. - (2009), pp. 513-514. (Intervento presentato al convegno 9th IEEE Conference on Nanotechnology (IEEE-NANO) tenutosi a Genoa nel 26-30 July 2009).
n-type SiGe heterostructures for THz intersubband transitions
CIASCA, Gabriele;ORTOLANI, MICHELE;NUCARA, Alessandro;CALVANI, Paolo
2009
Abstract
Research on band-gap engineering of Silicon-Germanium heterostructures for the realization of Quantum Cascade (QC) structures emitting in the Terahertz (THz) spectral region has recently attracted a vast interest. While several successful attempts have been reported using hole-based (p-type) intersubband transitions, very few results have been published on systems exploiting electrons (n-type). In this work we present the optical and structural characterization of n-type heterostructures made either of tensely-strained Si (sSi) quantum well (QW) confined between low Ge content Si1-xGex barriers [0.2I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
