We present the first investigation of bright screening soliton formation in Erbium doped lithium niobate grown by the Czochrlaski technique (0.7% mol.). We analyse the formation of two-dimensional spatial soliton and study its long term stability. Measurements of photovoltaic current show that presence of erbium in the lattice cause an increase of the current density. Both dynamic of soliton formation and photovoltaic measurements indicates a lower NA content in erbium doped samples compared to undoped samples.

Photorefractive bright soliton in erbium doped lithium niobate / Pettazzi, Federico; Leahu, Grigore; Alonzo, Massimo; C., Sada; M., Bazzan; N., Argiolas; P., Mazzoldi; M., Chauvet; V. I., Vlad; A., Petris; Fazio, Eugenio. - 6183:(2006), pp. 618319-1-618319-9. (Intervento presentato al convegno Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits tenutosi a Strasbourg; France) [10.1117/12.664082].

Photorefractive bright soliton in erbium doped lithium niobate

PETTAZZI, Federico;LEAHU, GRIGORE;ALONZO, Massimo;FAZIO, Eugenio
2006

Abstract

We present the first investigation of bright screening soliton formation in Erbium doped lithium niobate grown by the Czochrlaski technique (0.7% mol.). We analyse the formation of two-dimensional spatial soliton and study its long term stability. Measurements of photovoltaic current show that presence of erbium in the lattice cause an increase of the current density. Both dynamic of soliton formation and photovoltaic measurements indicates a lower NA content in erbium doped samples compared to undoped samples.
2006
Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits
Lithium Niobate; Nonlinear Optics; Photorefractive Effect
04 Pubblicazione in atti di convegno::04b Atto di convegno in volume
Photorefractive bright soliton in erbium doped lithium niobate / Pettazzi, Federico; Leahu, Grigore; Alonzo, Massimo; C., Sada; M., Bazzan; N., Argiolas; P., Mazzoldi; M., Chauvet; V. I., Vlad; A., Petris; Fazio, Eugenio. - 6183:(2006), pp. 618319-1-618319-9. (Intervento presentato al convegno Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits tenutosi a Strasbourg; France) [10.1117/12.664082].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/326009
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