We review some results obtained by anelastic spectroscopy on H-related defects in III-V semiconductors. Anelastic measurements on InP lead to the formulation of a model explaining the conversion to the semi-insulating (SI) state. Moreover, in GaAs:Zn an extraordinarily fast relaxation rate has been measured and a possible explanation has been suggested. This results are reviewed and discussed in the light of new experiments on InP:Zn, whose spectrum shows a relaxation process similar to the one in GaAs:Zn. (C) 2003 Elsevier B.V. All rights reserved.

Hydrogen trapping by defects in semiconductors studied by anelastic spectroscopy / Palumbo, Oriele; Cantelli, Rosario. - In: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING. - ISSN 0921-5093. - 370:1-2(2004), pp. 114-117. (Intervento presentato al convegno 13th International Conference on Internal Friction and Ultrasonic Attentuation in Solids tenutosi a Bilbao, SPAIN nel JUL 08-12, 2002) [10.1016/j.msea.2003.08.092].

Hydrogen trapping by defects in semiconductors studied by anelastic spectroscopy

PALUMBO, Oriele;CANTELLI, Rosario
2004

Abstract

We review some results obtained by anelastic spectroscopy on H-related defects in III-V semiconductors. Anelastic measurements on InP lead to the formulation of a model explaining the conversion to the semi-insulating (SI) state. Moreover, in GaAs:Zn an extraordinarily fast relaxation rate has been measured and a possible explanation has been suggested. This results are reviewed and discussed in the light of new experiments on InP:Zn, whose spectrum shows a relaxation process similar to the one in GaAs:Zn. (C) 2003 Elsevier B.V. All rights reserved.
2004
gallium arsenide; hydrogen; indium phosphide; point defect complexes
01 Pubblicazione su rivista::01a Articolo in rivista
Hydrogen trapping by defects in semiconductors studied by anelastic spectroscopy / Palumbo, Oriele; Cantelli, Rosario. - In: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING. - ISSN 0921-5093. - 370:1-2(2004), pp. 114-117. (Intervento presentato al convegno 13th International Conference on Internal Friction and Ultrasonic Attentuation in Solids tenutosi a Bilbao, SPAIN nel JUL 08-12, 2002) [10.1016/j.msea.2003.08.092].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/28136
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