Criteria to obtain an accurate multiple-bias linear model for MESFET and HEMT de¨ices are proposed. Based on these criteria, an automatic extraction procedure to identify model parameters has been developed. The extraction procedure has been successfully checked on HEMT devices in GaAs and InP technologies up to 50 GHz.
A New Procedure for the Extraction of a Multi-Bias Linear Model for Mesfet's and Hemt's / A., DI MARTINO; E., Dutisseuil; C., Ladner; Pisa, Stefano; Tommasino, Pasquale; Trifiletti, Alessandro. - In: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. - ISSN 0895-2477. - 25:4:(2000), pp. 263-266.
A New Procedure for the Extraction of a Multi-Bias Linear Model for Mesfet's and Hemt's
PISA, Stefano;TOMMASINO, PASQUALE;TRIFILETTI, Alessandro
2000
Abstract
Criteria to obtain an accurate multiple-bias linear model for MESFET and HEMT de¨ices are proposed. Based on these criteria, an automatic extraction procedure to identify model parameters has been developed. The extraction procedure has been successfully checked on HEMT devices in GaAs and InP technologies up to 50 GHz.File allegati a questo prodotto
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